利用分子束外延技术在GaAs（100）衬底上生长了1.3 μm InAs DWELL量子点激光器结构，研究了有源区Be掺杂对量子点激光器性能的影响。研究表明，对有源区进行Be掺杂可以有效降低InAs量子点激光器的阈值电流密度，提升激光器的输出功率，增加激光器的温度稳定性。研制的Be掺杂InAs量子点激光器的阈值电流降低到12 mA，相应的阈值电流密度仅为100 A/cm²，激光器的最高输出功率达到183 mW，最高工作温度达到了130 ℃。这对InAs量子点激光器器件在光通信系统中的应用具有重要意义。

We report the InAs/GaAs quantum dot laterally coupled distributed feedback (LC-DFB) lasers operating at room temperature in the wavelength range of 1.31 µm. First-order chromium Bragg gratings were fabricated alongside the ridge waveguide to obtain the maximum coupling coefficient with the optical field. Stable continuous-wave single-frequency operation has been achieved with output power above 5 mW/facet and side mode suppression ratio exceeding 52 dB. Moreover, a single chip integrating three LC-DFB lasers was tentatively explored. The three LC-DFB lasers on the chip can operate in single mode at room temperature, covering the wavelength span of 35.6 nm.

采用气体源分子束外延（GSMBE）技术，研究了InP衬底上In_yAl_1-yAs线性渐变缓冲层对In_0.66Ga_0.34As/In_yAl_1-yAs高迁移率晶体管（HEMT）材料特性影响。研究了不同厚度和不同铟含量的In_yAl_1-yAs线性渐变缓冲层对材料的表面质量、电子迁移率和二维电子气浓度的影响。结果表明，在300 K（77 K）时，电子迁移率和电子浓度分别为8 570 cm²/（Vs）^-1（23 200 cm²/（Vs）-1）3.255E12 cm^-2（2.732E12 cm^-2）。当In_yAl_1-yAs线性渐变缓冲层厚度为50 nm时，材料的表面形貌得到了很好的改善，均方根粗糙度（RMS）为0.154 nm。本研究可以为HEMT器件性能的提高提供强有力的支持。

Bound states in the continuum (BICs) can make subwavelength dielectric resonators sustain low radiation leakage, paving a new way to minimize the device size, enhance photoluminescence, and even realize lasing. Here, we present a quasi-BIC-supporting GaAs nanodisk with embedded InAs quantum dots as a compact bright on-chip light source, which is realized by heterogeneous integration, avoiding complex multilayered construction and subsequent mismatch and defects. The emitters are grown inside the nanodisk to match the mode field distribution to form strong light–matter interaction. One fabricated sample demonstrates a photoluminescence peak sustaining a quality factor up to 68 enhanced by the quasi-BIC, and the emitting effect can be further promoted by improving the epilayer quality and optimizing the layer-transferring process in the fabrication. This work provides a promising solution to building an ultracompact optical source to be integrated on a silicon photonic chip for high-density integration.